Irf634a
IRF634A Product details. FEATURES. ♦ Avalanche Rugged Technology. ♦ Rugged Gate Oxide Technology. ♦ Lower Input Capacitance. ♦ Improved Gate Charge. ♦ Extended Safe Operating Area. ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V.
Irf634a
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WebMar 1, 2024 · Product Code: IRF634A SAMSUNG TRANSISTOR TO-220 (LOT OF 10) Availability: In Stock; 0 reviews / Write a review. IRF634A SAMSUNG TRANSISTOR TO-220 … WebFind the best pricing for Fairchild Semiconductor IRF634A by comparing bulk discounts per 1,000. Octopart is the world’s source for Fairchild Semiconductor IRF634A availability, …
WebIRF634A Datasheet (PDF) Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS (on) = 0.45 Rugged Gate Oxide Technology Lower Input … WebIRFS634A Datasheet Advanced Power MOSEFT - Samsung semiconductor isc N-Channel MOSFET Transistor, Inchange Semiconductor Company Limited
WebIRF634A: Descripción: Advanced Power MOSFET: Fabricantes: Fairchild Semiconductor Logotipo: Hay una vista previa y un enlace de descarga de IRF634A (archivo pdf) en la … Webof 7 $GYDQFHG 3RZHU 026) (7 IRF634A FEATURES BVDSS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology RDS (on) = 0.45 Lower Input Capacitance ID = 8.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 250V TO-220 Lower RDS (ON): 0.327 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source
WebPDF IRF634A Data sheet ( Hoja de datos ) Número de pieza. IRF634A. Descripción. Advanced Power MOSFET. Fabricantes. Fairchild Semiconductor. Logotipo. Hay una vista previa y un enlace de descarga de IRF634A (archivo pdf) en la parte inferior de esta página.
WebБольшой каталог товаров: Транзистор irf530 - сравнение цен в интернет магазинах, описания и характеристики товаров, отзывы share button imageWebBuy IRF634A FAIRCHILD , Learn more about IRF634A Advanced Power MOSFET, View the manufacturer, and stock, and datasheet pdf for the IRF634A at Jotrin Electronics. pooling before or after activationWebIRF634A FEATURES BVDSS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology RDS (on) = 0.45 Lower Input Capacitance Improved Gate Charge ID = 8.1 A Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 250V TO-220 Lower RDS (ON): 0.327 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings … share button greyed out edgeWebIRF634 www.vishay.com Vishay Siliconix S21-0340-Rev. C, 12-Apr-2024 4 Document Number: 91034 For technical questions, contact: [email protected] THIS DOCUMENT IS … share button in android studioWebБольшой каталог товаров: Транзистор irfp064n - сравнение цен в интернет магазинах, описания и характеристики товаров, отзывы pool in front of houseWebIRF634B datasheet - 250V N-channel B-FET / Substitute of IRF634 IRF634A Details, datasheet, quote on part number: IRF634B Features, Applications These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. share button in excel greyed outWeb常用场效应管型号参数管脚识别及检测表常用场效应管型号参数管脚识别及检测表 场效应管管脚识别 场效应管的检测和使用 ... share button in excel